Ellipsometric spectroscopy on polycrystalline CuIn1-xGaxSe2: Identification of optical transitions
Identifieur interne : 009E49 ( Main/Repository ); précédent : 009E48; suivant : 009E50Ellipsometric spectroscopy on polycrystalline CuIn1-xGaxSe2: Identification of optical transitions
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Abstract
Bulk materials have been synthesized by the Bridgman technique using the elements Cu, Ga, In, Se. Bulk samples have been characterized by EDS (Energy Dispersive Spectrometer), hot point, X-ray diffraction, photoluminescence and spectroscopic ellipsometry (SE). The samples used were well crystallized and lended strong support to the achievement of a good stoechiometry. Energy levels above the gap in the band scheme were determined by measuring the dielectric function at ambient temperature for energies lying between 1.5 and 5.5 eV. Many transitions were observed above the gap for different samples of CuIn1-xGaxSe2(0 ≤ x ≤ 1) alloy. Spectroscopic ellipsometry gave evidence for the interpretation of the choice of gap values which were compatible with that obtained from solar spectrum [1].
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ellipsometric spectroscopy on polycrystalline CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub>: Identification of optical transitions</title><author><name sortKey="El Haj Moussa, G W" uniqKey="El Haj Moussa G">G. W. El Haj Moussa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LPSE, Department of Physics, Faculty of Sciences II - Lebanese University, BP 26110217</s1><s2>Fanar-Maten</s2><s3>LBN</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Liban</country><wicri:noRegion>Fanar-Maten</wicri:noRegion></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>CEM2 Faculty of Sciences and Technology of Languedoc, University of Montpellier II, Place Eugène Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Ajaka, M" uniqKey="Ajaka M">M. Ajaka</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>CEM2 Faculty of Sciences and Technology of Languedoc, University of Montpellier II, Place Eugène Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="El Tahchi, M" uniqKey="El Tahchi M">M. El Tahchi</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>CEM2 Faculty of Sciences and Technology of Languedoc, University of Montpellier II, Place Eugène Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Eid, E" uniqKey="Eid E">E. Eid</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>CEM2 Faculty of Sciences and Technology of Languedoc, University of Montpellier II, Place Eugène Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName></affiliation></author><author><name sortKey="Llinares, C" uniqKey="Llinares C">C. Llinares</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LPSE, Department of Physics, Faculty of Sciences II - Lebanese University, BP 26110217</s1><s2>Fanar-Maten</s2><s3>LBN</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Liban</country><wicri:noRegion>Fanar-Maten</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">05-0155809</idno><date when="2005">2005</date><idno type="stanalyst">PASCAL 05-0155809 INIST</idno><idno type="RBID">Pascal:05-0155809</idno><idno type="wicri:Area/Main/Corpus">00A505</idno><idno type="wicri:Area/Main/Repository">009E49</idno></publicationStmt><seriesStmt><idno type="ISSN">0031-8965</idno><title level="j" type="abbreviated">Phys. status solidi, A, Appl. res.</title><title level="j" type="main">Physica status solidi. A. Applied research</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bridgman method</term><term>Copper</term><term>Dielectric function</term><term>Dispersive spectrometry</term><term>Energy gap</term><term>Energy levels</term><term>Indium selenides</term><term>Optical transition</term><term>Photoluminescence</term><term>Polycrystals</term><term>Spectroscopic ellipsometry</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Ellipsométrie spectroscopique</term><term>Transition optique</term><term>Méthode Bridgman</term><term>Spectrométrie dispersive</term><term>Diffraction RX</term><term>Photoluminescence</term><term>Niveau énergie</term><term>Bande interdite</term><term>Fonction diélectrique</term><term>Polycristal</term><term>Cuivre</term><term>Indium séléniure</term><term>78</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Bulk materials have been synthesized by the Bridgman technique using the elements Cu, Ga, In, Se. Bulk samples have been characterized by EDS (Energy Dispersive Spectrometer), hot point, X-ray diffraction, photoluminescence and spectroscopic ellipsometry (SE). The samples used were well crystallized and lended strong support to the achievement of a good stoechiometry. Energy levels above the gap in the band scheme were determined by measuring the dielectric function at ambient temperature for energies lying between 1.5 and 5.5 eV. Many transitions were observed above the gap for different samples of CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub>(0 ≤ x ≤ 1) alloy. Spectroscopic ellipsometry gave evidence for the interpretation of the choice of gap values which were compatible with that obtained from solar spectrum [1].</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0031-8965</s0></fA01><fA02 i1="01"><s0>PSSABA</s0></fA02><fA03 i2="1"><s0>Phys. status solidi, A, Appl. res.</s0></fA03><fA05><s2>202</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Ellipsometric spectroscopy on polycrystalline CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub>: Identification of optical transitions</s1></fA08><fA11 i1="01" i2="1"><s1>EL HAJ MOUSSA (G. W.)</s1></fA11><fA11 i1="02" i2="1"><s1>AJAKA (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>EL TAHCHI (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>EID (E.)</s1></fA11><fA11 i1="05" i2="1"><s1>LLINARES (C.)</s1></fA11><fA14 i1="01"><s1>LPSE, Department of Physics, Faculty of Sciences II - Lebanese University, BP 26110217</s1><s2>Fanar-Maten</s2><s3>LBN</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>CEM2 Faculty of Sciences and Technology of Languedoc, University of Montpellier II, Place Eugène Bataillon</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>469-475</s1></fA20><fA21><s1>2005</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183A</s2><s5>354000126290290240</s5></fA43><fA44><s0>0000</s0><s1>© 2005 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>05-0155809</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. A. Applied research</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>Bulk materials have been synthesized by the Bridgman technique using the elements Cu, Ga, In, Se. Bulk samples have been characterized by EDS (Energy Dispersive Spectrometer), hot point, X-ray diffraction, photoluminescence and spectroscopic ellipsometry (SE). The samples used were well crystallized and lended strong support to the achievement of a good stoechiometry. Energy levels above the gap in the band scheme were determined by measuring the dielectric function at ambient temperature for energies lying between 1.5 and 5.5 eV. Many transitions were observed above the gap for different samples of CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub>(0 ≤ x ≤ 1) alloy. 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